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PSMN003-30P Даташит - NXP Semiconductors.

PSMN003-30P image

Номер в каталоге
PSMN003-30P

Компоненты Описание

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page
14 Pages

File Size
223.5 kB

производитель
NXP
NXP Semiconductors. NXP

General description
SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics


APPLICATIONs
■ High frequency computer motherboard
   DC-to-DC convertors
■ OR-ing applications


Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved

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