Номер в каталоге
PSMN003-30P
производитель
NXP Semiconductors.
General description
SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
FEATUREs and benefits
■ Low conduction losses due to low
on-state resistance
■ Suitable for high frequency
applications due to fast switching
characteristics
APPLICATIONs
■ High frequency computer motherboard
DC-to-DC convertors
■ OR-ing applications
Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved