производитель
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description:
This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application.
FEATUREs:
N-Channel: VDS=40V,ID=8 A,RDS(ON)< 19mΩ @VGS=10V
P-Channel: VDS=-40V,ID=-7 A,RDS(ON)< 35mΩ @VGS=-10V
1) High Power and current handing capability.
2) Lead free product is acquired.
3) Surface Mount Package.
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производитель
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.