Description：
This P-Chanel and N-Channel MOSFET use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

FEATUREs：
1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)<30mΩ @VGS=10V
    P-Channel: VDS=-30V,ID=-7A,RDS(ON)<33mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.