P60NS04Z Даташит - STMicroelectronics
Номер в каталоге
P60NS04Z
Компоненты Описание
Other PDF
no available.
PDF
page
8 Pages
File Size
90.8 kB
производитель
STMicroelectronics
DESCRIPTION
This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest
operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
■ TYPICAL RDS(on)= 0.010Ω
■ 100% AVALANCHE TESTED
■ LOW CAPACITANCE AND GATE CHARGE
■ 175°C MAXIMUM JUNCTION TEMPERATURE
Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel clamped - 10mΩ- 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET
STMicroelectronics
N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET
STMicroelectronics
N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET
STMicroelectronics
N-channel clamped 12.5mΩ- 62A - TO-220 Fully protected MESH OVERLAY™ Power MOSFET
STMicroelectronics
N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET
STMicroelectronics
N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay™ MOSFET
STMicroelectronics
N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET
STMicroelectronics
N-channel clamped 3.5 mΩ - 120 A TO-220 fully protected SAFeFET™ Power MOSFET
STMicroelectronics
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh™ IGBT
STMicroelectronics
Share Link: