P60NS04Z Просмотр технического описания (PDF) - STMicroelectronics
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P60NS04Z
STMicroelectronics
P60NS04Z Datasheet PDF : 8 Pages
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STP60NS04Z
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Qg
Qgs
Qgd
P ar am et e r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 16 V ID = 60 A VGS = 10 V
Min.
Typ.
70
20
22
Max.
100
Unit
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VCLAMP = 30 V ID = 60 A
RG =4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
25
110
150
Max.
35
150
200
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 60 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 60 A
di/dt = 100 A/µs
Vr = 25 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
60
240
Unit
A
A
1.5
V
65
ns
0.15
µC
4.5
A
Safe Operating Area
Thermal Impedance
3/8
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