General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

FEATUREs and benefits
■ Low noise, high linearity, high breakdown RF transistor
■ AEC-Q101 qualified
■ Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
■ Maximum stable gain 15.5 dB at 900 MHz
■ 11 GHz fT silicon technology

APPLICATIONs
■ Applications requiring high supply voltages and high breakdown voltages
■ Broadband amplifiers up to 2 GHz
■ Low noise, high linearity amplifiers for ISM applications
■ Automotive applications (e.g., antenna amplifiers)