General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

FEATUREs and benefits
■ Medium power, high linearity, high breakdown voltage RF transistor
■ AEC-Q101 qualified
■ Maximum stable gain 13 dB at 900 MHz
■ PL(1dB) 21.5 dBm at 900 MHz
■ 8.5 GHz fT silicon technology

APPLICATIONs
■ Automotive applications
■ Broadband amplifiers
■ Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
■ Large signal amplifiers for ISM applications