NESG2021M05-T1 Даташит - Renesas Electronics
Номер в каталоге
NESG2021M05-T1
Компоненты Описание
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no available.
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page
14 Pages
File Size
147 kB
производитель
Renesas Electronics
FEATURES
• This device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
Номер в каталоге
Компоненты Описание
PDF
производитель
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