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NESG3031M05 Даташит - California Eastern Laboratories.

NESG3031M05 image

Номер в каталоге
NESG3031M05

Other PDF
  2004  

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9 Pages

File Size
214.6 kB

производитель
CEL
California Eastern Laboratories. CEL

FEATURES
• The device is an ideal choice for low noise, high-gain amplification
    NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
    NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
    NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)

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Компоненты Описание
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производитель
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NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
California Eastern Laboratories.

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