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NE6500496_00 Даташит - NEC => Renesas Technology

NE6500496_00 image

Номер в каталоге
NE6500496_00

Компоненты Описание

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28.1 kB

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NEC
NEC => Renesas Technology NEC

DESCRIPTION
The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known.


FEATURES
• HIGH OUTPUT POWER: 4 W
• HIGH LINEAR GAIN: 11.5 dB
• HIGH EFFICIENCY (PAE): 45%
• INDUSTRY STANDARD PACKAGING

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Номер в каталоге
Компоненты Описание
PDF
производитель
L/S BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
3W L, S-BAND POWER GaAs MESFET
NEC => Renesas Technology
NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
C-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
California Eastern Laboratories.
100W L-BAND PUSH-PULL POWER GaAs MESFET
NEC => Renesas Technology
L,S BAND POWER GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
L,S BAND POWER GaAs FET
Mitsumi
L, S BAND POWER GaAs FET
Mitsumi
L, S BAND POWER GaAs FET
Mitsumi

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