DESCRIPTION
The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

FEATURES
• Class A operation
• High output power
   P1dB=40.0dBm(TYP.) @f=2.3GHz
• High power gain
   GLP=10.0dB(TYP.) @f=2.3GHz
• High power added efficiency
   P.A.E =37%(TYP.) @f=2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid

APPLICATION
• For UHF Band power amplifiers