Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection

FEATUREs
• Diode Clamp Between Gate and Source
• ESD Protection − Human Body Model 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance
• These are Pb−Free Devices

Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation

APPLICATIONs
• Automotive and Industrial Markets:
   Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q100
   Qualified and PPAP Capable