Description
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections.
The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 7A or the junction temperature exceeds 165°C and keeps it off until the input is driven low. The drain-to-source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn-off with inductive loads.
The input current requirements are very low (300µA) which makes the IRSF3011 compatible with most existing designs based on standard power MOSFETs.

FEATUREs
• Extremely Rugged for Harsh Operating Environments
• Over-Temperature Protection
• Over-Current Protection
• Active Drain-to-Source Clamp
• ESD Protection
• Compatible with Standard Power MOSFET
• Low Operating Input Current
• Monolithic Construction

APPLICATIONs
• Solenoid Driver
• DC Motor Driver