MTP6N60 Даташит - New Jersey Semiconductor
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MTP6N60
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New Jersey Semiconductor
DESCRITION
• Designed for high efficiency switch mode power supply.
FEATURES
• Drain Current -ID= 6A@ TC=25°C
• Drain Source Voltage-
: VDSS= 600V(Min)
• Static Drain-Source On-Resistance
: RDS(on)= 1.2Ω (Max)
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
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