MTP1N60 Даташит - New Jersey Semiconductor
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MTP1N60
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New Jersey Semiconductor
• DESCRITION
• Designed for high efficiency switch mode power supply.
• FEATURES
• Drain Current -ID= 1A@ TC=25°C
• Drain Source Voltage-: VDSS= 600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 8 Ω (Max)
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
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