DESCRIPTION
The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range.

■ EMITTER BALLASTED
■ VSWR CAPABILITY ∞:1 @ RATED CONDITIONS
■ HERMETIC STRIPAC PACKAGE
■ POUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz