DESCRIPTION
The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.

. REFRACTORY/GOLD METALLIZATION
. EMITTER BALLASTED
. VSWR CAPABILITY ∞:1 @ RATED CONDITIONS
. HERMETIC STRIPAC PACKAGE
. POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz