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MMA20312BT1(2011) Даташит - Freescale Semiconductor

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MMA20312BT1

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Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD-SCDMA, PCS, UMTS and LTE. The amplifier is housed in a low-cost, surface mount QFN plastic package.

Features
• Active Bias Control (On-chip)
• Frequency: 1800-2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)
• Single 5 Volt Supply
• Low Cost QFN Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

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Heterojunction Bipolar Transistor Technology (InGaP HBT)
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