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MMA25312BT1 Даташит - NXP Semiconductors.

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MMA25312BT1

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NXP
NXP Semiconductors. NXP

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 V supply.

Features
• Frequency: 2300-2700 MHz
• P1dB: 31 dBm @ 2500 MHz
• Power Gain: 26 dB @ 2500 MHz
• Third Order Output Intercept Point: 40 dBm @ 2500 MHz
• Active Bias Control (On-chip)
• Single 3 to 5 V Supply
• Single-ended Power Detector
• Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

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производитель
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