DESCRIPTION
The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
   Class A operation
   Internally matched to 50(ohm) system
   High output power
      P1dB = 30W (TYP.) @ f=2.7 - 3.5 GHz
   High power gain
      GLP = 12 dB (TYP.) @ f=2.7 - 3.5GHz
   High power added efficiency
      P.A.E. = 36 % (TYP.) @ f=2.7 - 3.5GHz
   Low distortion [item -51]
      IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION
   item 01 : 2.7 - 3.5 GHz band power amplifier
   item 51 : 2.7 - 3.5 GHz band digital radio communication