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MGFC40V5258(2011) Даташит - MITSUBISHI ELECTRIC

MGFC40V5258 image

Номер в каталоге
MGFC40V5258

Компоненты Описание

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page
2 Pages

File Size
85.6 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
Class A operation
Internally matched to 50(ohm) system
• High output power
   P1dB=10W (TYP.) @f=5.2 – 5.8GHz
• High power gain
   GLP=10dB (TYP.) @f=5.2 – 5.8GHz
• High power added efficiency
   P.A.E.=32% (TYP.) @f=5.2 – 5.8GHz


APPLICATION
• item 01 : 5.2 – 5.8 GHz band power amplifier
• item 51 : 5.2 – 5.8 GHz band digital radio communication

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Номер в каталоге
Компоненты Описание
PDF
производитель
C band internally matched power GaAs FET
Mitsumi
C band internally matched power GaAs FET ( Rev : 2011 )
Mitsumi
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC

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