datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  MITSUBISHI ELECTRIC   >>> MGFC36V3436 PDF

MGFC36V3436(2011) Даташит - MITSUBISHI ELECTRIC

MGFC36V3436 image

Номер в каталоге
MGFC36V3436

Компоненты Описание

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
2 Pages

File Size
84.5 kB

производитель
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
Class A operation
Internally matched to 50(ohm) system
● High output power P1dB=4W (TYP.) @f=3.4 – 3.6GHz
● High power gain GLP=13.5dB (TYP.) @f=3.4 – 3.6GHz
● High power added efficiency P.A.E.=32% (TYP.) @f=3.4 – 3.6GHz
● Low distortion [item -51] IM3=-45dBc (TYP.) @Po=25dBm S.C.L


APPLICATION
● item 01 : 3.4 – 3.6 GHz band power amplifier
● item 51 : 3.4 – 3.6 GHz band digital radio communication

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
C band internally matched power GaAs FET
Mitsumi
C band internally matched power GaAs FET ( Rev : 2011 )
Mitsumi
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]