MGF0909 Даташит - MITSUBISHI ELECTRIC
Номер в каталоге
MGF0909
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20.1 kB
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
• High output power
P1dB=38dBm(TYP.) @f=2.3GHz
• High power gain
GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm
• High power added efficiency
hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm
APPLICATION
For UHF Band power amplifiers
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