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MBR1635G(2014) Даташит - ON Semiconductor

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MBR1635G

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7 Pages

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ON-Semiconductor
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Switch-mode Power Rectifiers
16 A, 35 and 45 V

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.


FEATUREs
• Guard−ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• NRVB Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

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