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MBR2080CTG(2015) Даташит - ON Semiconductor

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MBR2080CTG

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Switch-mode Power Rectifiers

This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:


FEATUREs
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• These Devices are Pb−Free and are RoHS Compliant*

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