Description
This device is a silicon, glass PIN diode surmount chip fabricated with M/A-COM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.

FEATUREs
♦ 0603 Outline
♦ Surface Mount
♦ 15µm I-Region Length Devices
♦ No Wirebonds Required
♦ Silicon Nitride Passivation
♦ Polymer Scratch Protection
♦ Low Parasitic Capacitance and Inductance
♦ High Average and Peak Power Handling

APPLICATIONs
   These packageless devices are suitable for usage in moderate incident power, ≤ 50dBm/C.W. or where the peak power is ≤ 75dBm, pulse width is ≤ 1µS, and duty cycle is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and excellent RC constant, make these devices a superior choice for higher frequency switch elements when compared to their plastic package counterparts.