Description
M/A-COMs MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly.

FEATUREs
♦ Low Series Resistance
♦ Ultra Low Capacitance
♦ Millimeter Wave Switching & Cutoff Frequency
♦ 2 Nanosecond Switching Speed
♦ Can be Driven by a Buffered TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant