Description and Applications
M/A-COMs MA4AGP907 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics. The useable frequency range is 100 MHz to 40 GHz.
They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling.

FEATUREs
• Low Series Resistance, 3 Ω
• Ultra Low Capacitance, 25 fF
• High Switching Cutoff Frequency, 40 GHz
• 2 Nanosecond Switching Speed
• Can be Driven by Buffered TTL
• Silicon Nitride Passivation
• Polyamide Scratch Protection