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K6X1008C2D Даташит - Samsung

K6X1008C2D image

Номер в каталоге
K6X1008C2D

Компоненты Описание

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page
10 Pages

File Size
118.6 kB

производитель
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6X1008C2D families are fabricated by SAMSUNG's advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.


FEATURES
· Process Technology: Full CMOS
· Organization: 128K x 8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525,
                     32-SOP-525, 32-TSOP1-0820F

 

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Номер в каталоге
Компоненты Описание
PDF
производитель
128K x 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
LOW POWER 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K X 8 LOW POWER CMOS STATIC RAM ( Rev : 2002 )
Taiwan Memory Technology
128K x 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
LOW POWER 128K x 8 CMOS STATIC RAM
Semiconductor Corporation
128K x 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc

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