Features
•  Low on-resistance: RDS(on)= 1.1 Ωtyp.
•  Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
•  High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
•  Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
•  Avalanche ratings