K3233 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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K3233 Datasheet PDF : 10 Pages
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2SK3233
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
200
100
50
Coss
20
10
Crss
5
0
50 100 150 200 250
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
1000
20
ID= 5 A
VGS
800
16
V DD = 100 V
600
250 V
400 V
12
VDS
400
8
200
0
V DD = 400 V
4
250 V
100 V
0
10 20 30 40 50
Gate Charge Qg (nC)
1000
500
Switching Characteristics
VGS = 10 V, V DD = 250 V
PW = 10 µs, duty < 1 %
RG=10 Ω
200
100
t d(off)
50
tf
20 t d(on)
10 t r
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
6
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