Toshiba K30A06J3A Даташит, K30A06J3A PDF, даташитов

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K30A06J3A Даташит - Toshiba

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K30A06J3A

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)

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Switching Regulator Applications

● Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.)
● High forward transfer admittance: |Yfs| = 34 S (typ.)
● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

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