K30A06J3A Просмотр технического описания (PDF) - Toshiba
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K30A06J3A Datasheet PDF : 6 Pages
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TK30A06J3A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)
TK30A06J3A
Switching Regulator Applications
Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 34 S (typ.)
z Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
V
60
V
±20
V
30
A
90
A
25
W
40
mJ
30
A
2.5
mJ
150
°C
−55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
5.0
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
62.5
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 60 μH, RG = 25 Ω, IAR = 30 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.Handle with care.
3
1
2009-09-29
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