K12A55D Даташит - Toshiba
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K12A55D
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6 Pages
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Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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производитель
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