2SK3669(2006) Даташит - Toshiba
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2SK3669
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Switching Regulator, Audio Amplifier and Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 6 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
• Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
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Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) ( Rev : 2013 )
Toshiba
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