Features
• UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode)
• Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation
• IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-252AA package
• Lead-Free

Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
• Lower losses than MOSFETs condition and Diode losses