IRG4RC10UDPBF Просмотр технического описания (PDF) - International Rectifier

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IRG4RC10UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

1.6

1.2

Square wave:

0.8

60% of rated

voltage

I

0.4

Ideal diodes

0.0

0.1

IRG4RC10UDPbF

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 9505°°CC

Gate drive as specified

Power Dissipation = 1.4 W

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25 oC

TJ = 150 oC

10

1

0.1

1

VGE = 15V

20µs PULSE WIDTH

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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100

10

TJ = 150 oC

TJ = 25 oC

VCC = 50V

5µs PULSE WIDTH

1

5 6 7 8 9 10 11 12 13 14

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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