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IRF620 Даташит - STMicroelectronics

IRF620 image

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IRF620

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on) = 0.55 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C


APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT

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PDF
производитель
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Comset Semiconductors
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics

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