IRF620 Просмотр технического описания (PDF) - STMicroelectronics
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IRF620 Datasheet PDF : 9 Pages
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symb ol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 100 V ID = 3 A
RG = 50 Ω VGS = 10 V
(see test circuit)
ID = 6 A VGS = 10 V
VDD = Max Rating x 0.8
(see test circuit)
SOURCE DRAIN DIODE
Symb ol
IS D
I SDM(•)
VSD (∗)
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Test Conditions
ISD = 6 A VGS = 0
trr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 6 A
VDD = 100 V
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
IRF620/FI
Min.
Typ.
30
70
135
45
20
6
8
Max.
45
100
190
65
30
Unit
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
6
24
Unit
A
A
1.5
V
170
ns
1
µC
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
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