производитель
![NJSEMI](/logo/NJSEMI.png)
New Jersey Semiconductor
![NJSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from intpnrated circuits.
FEATUREs
• 25A and 28A, 80V and 100V
• rDS(ON)= 0-077U and O.IOOfi
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
Номер в каталоге
Компоненты Описание
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производитель
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
New Jersey Semiconductor
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
Intersil
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Intersil
-25A, -100V and -80V, 0.150Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
Intersil
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Intersil
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Intersil
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
Intersil