производитель
Intersil
Description
These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
FEATUREs
• 2A, 80V and 100V
• rDS(ON) 1.05Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Номер в каталоге
Компоненты Описание
PDF
производитель
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
Intersil
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
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12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
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18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
Intersil
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Intersil
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Intersil
-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
Intersil
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Intersil