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IRF520 Даташит - STMicroelectronics

IRF520 image

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IRF520

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  2002  

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
   
■ TYPICAL RDS(on) = 0.23 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
   
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
    ABS, AIR-BAG, LAMPDRIVERS, Etc.)
   

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Компоненты Описание
PDF
производитель
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Comset Semiconductors
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics

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