The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The HYB 514800BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user.

Advanced Information
• 512 288 words by 8-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
    RAS access time:
    60 ns (-60 version)
    70 ns (-70 version)
    80 ns (-80 version)
    CAS access time: 20 ns
    Cycle time:
    110 ns (-60 version)
    130 ns (-70 version)
    150 ns (-80 version)
• Fast page mode cycle time
    45 ns (-60 version)
    45 ns (-70 version)
    50 ns (-80 version)
• Single + 5 V (± 10 %) supply with a built-in Vbb generator
• Low power dissipation
    max. 605 mW active (-60 version)
    max. 550 mW active (-70 version)
    max. 468 mW active (-80 version)
• Standby power dissipation:
    11 mW standby standby (TTL)
    5.5 mW max.standby (CMOS)
• Output unlatched at cycle end allows twodimensional chip selection
• Read, write, read-modify write, CAS-beforeRAS refresh, RAS-only refresh, hidden refresh, fast page mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Packages: P-SOJ-28-2 400 mil width