The HYB 514171BJ is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 514171BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 514171BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.

Advanced Information
• 262 144 words by 16-bit organization
• 0 to 70 °C operating temperature
• Fast access and cycle time
• RAS access time:
    50 ns (-50 version)
    60 ns (-60 version)
• CAS access time: 15ns (-50, -60 version)
• Cycle time:
    95 ns (-50 version)
    110 ns (-60 version)
• Fast page mode cycle time
    35 ns (-50 version)
    40 ns (-60 version)
• Single + 5.0 V (± 10 %) supply with a built-in VBB generator
• Low Power dissipation
    max. 1045 mW active (-50 version)
    max. 935 mW active (-60 version)
• Standby power dissipation
    11 mW standby (TTL)
    5.5 mW max. standby (CMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh, hidden-refresh and fast page mode capability
• 2 CAS / 1 WE control
• All inputs and outputs TTL-compatible
• 512 refresh cycles / 16 ms
• Plastic Packages:
    P-SOJ-40-1 400 mil width