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HM62V8512CLTT-7 Даташит - Hitachi -> Renesas Electronics

HM62V8512C image

Номер в каталоге
HM62V8512CLTT-7

Компоненты Описание

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page
16 Pages

File Size
68.5 kB

производитель
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512C is suitable for battery backup system.


FEATUREs
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation
    - Active: 6.0 mW/MHz (typ)
    - Standby: 2.4 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs
• Battery backup operation

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Номер в каталоге
Компоненты Описание
PDF
производитель
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword ×8-bit)
Renesas Electronics
4 M SRAM (512-kword x 8-bit)
Hitachi -> Renesas Electronics

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