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HM628512C Даташит - Renesas Electronics

HM628512C image

Номер в каталоге
HM628512C

Компоненты Описание

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19 Pages

File Size
100.6 kB

производитель
Renesas
Renesas Electronics Renesas

Description
The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512C is suitable for battery backup system.


FEATUREs
•  Single 5 V supply
•  Access time: 55/70 ns (max)
•  Power dissipation
 Active: 10 mW/MHz (typ)
 Standby: 4 µW (typ)
•  Completely static memory. No clock or timing strobe required
•  Equal access and cycle times
•  Common data input and output: Three state output
•  Directly TTL compatible: All inputs and outputs
•  Battery backup operation

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Номер в каталоге
Компоненты Описание
PDF
производитель
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4 M SRAM (512-kword x 8-bit)
Hitachi -> Renesas Electronics

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