HM628512C Просмотр технического описания (PDF) - Renesas Electronics

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HM628512C

4 M SRAM (512-kword ×8-bit)

Renesas Electronics 

HM628512C Series

4 M SRAM (512-kword × 8-bit)

ADE-203-1212C (Z)

Rev. 3.0

Aug. 5, 2002

Description

The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,

higher performance and low power consumption by employing CMOS process technology (6-transistor

memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or

600-mil plastic DIP, is available for high density mounting. The HM628512C is suitable for battery backup

system.

Features

• Single 5 V supply

• Access time: 55/70 ns (max)

• Power dissipation

 Active: 10 mW/MHz (typ)

 Standby: 4 µW (typ)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly TTL compatible: All inputs and outputs

• Battery backup operation

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