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GS82032AT-66 Даташит - Giga Semiconductor

GS82032AGT-100 image

Номер в каталоге
GS82032AT-66

Other PDF
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page
22 Pages

File Size
420.8 kB

производитель
GSI
Giga Semiconductor GSI

Features
• FT pin for user-configurable flow through or pipelined operation
• Single Cycle Deselect (SCD) operation
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipelined mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available


APPLICATIONs
The GS82032A is a 2,097,152-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.

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Номер в каталоге
Компоненты Описание
PDF
производитель
64K x 32 2Mb Synchronous Burst SRAM
Giga Semiconductor
3.3 V 64K X 16 CMOS SRAM
Alliance Semiconductor
3.3 V 64K X 16 CMOS SRAM
Alliance Semiconductor
2.5 V / 3.3 V, 187.5 MHz LVDS Clock Oscillator
ON Semiconductor
2.5 V/3.3 V Any Level Positive Input to −2.5 V/−3.3 V LVNECL Output Translator
ON Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Unspecified
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor

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