Functional description
The AS7C31026C is a 3V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

FEATUREs
• Industrial (-40° to 85°C) temperature
• Organization: 65,536 words × 16 bits
• Center power and ground pins for low noise
• High speed
    - 10 ns address access time
    - 5 ns output enable access time
• Low power consumption via chip deselect
• Upper and Lower byte pin
• Easy memory expansion with CE, OE inputs
• TTL-compatible, three-state I/O
• JEDEC standard packaging
    - 44-pin 400 mil SOJ
    - 44-pin TSOP 2-400
    - 48-ball 6 × 8 mm BGA
• ESD protection ≥ 2000 volts