GB20SHT12-CAL(2012) Даташит - GeneSiC Semiconductor, Inc.
Номер в каталоге
GB20SHT12-CAL
Компоненты Описание
Other PDF
PDF
page
3 Pages
File Size
210.6 kB
производитель
GeneSiC Semiconductor, Inc.
Features
• 1200 V Schottky rectifier
• 250 °C maximum operating temperature
• Temperature independent switching behavior
• Superior surge current capability
• Positive temperature coefficient of VF
• Extremely fast switching speeds
• Superior figure of merit QC/IF
Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
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